F4TCNQ is one of the most widely used and most effective p-type dopants due to its strong electron-accepting ability and the extended π system. It has a deep LUMO level (-5.2 eV) which is energetically in the vicinity of the HOMO level of many organic semiconductors. Doping is facilitated by charge transfer from the HOMO level of the host to the LUMO of the dopant molecule. Pin devices with F4TCNQ doped 4,4",4""-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA) serving as the p-doped HTL show high luminance and efficiency at extremely low operating voltages: For instance, a luminance of 1000 cd/m² is reached at a voltage of 2.9 V [1].

It has been reported that by controlling the doping concentration, the PCE of the PCDTBT:F4TCNQ solar cells increased from 6.41% to 7.94%, mainly due to improving the photocurrent with a F4TCNQ weight ratio of the blend lower than 0.5% [2]. F4TCNQ is also used as the p-type dopant for graphenes [3,4].

General Information

CAS number	29261-33-4
Chemical formula	C12F4N4
Molecular weight	276.15 g/mol
HOMO/LUMO	HOMO = 8.3 eV, LUMO = 5.2 eV
Synonyms	F4-TCNQ 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (2,3,5,6-Tetrafluoro-2,5-cyclohexadiene-1,4-diylidene)dimalononitrile 7,7,8,8-Tetracyano-2,3,5,6-tetrafluoroquinodimethane
Classification / Family	Fluorinated compounds, p-type dopant, Strong electron acceptor, Hole-injection materials, Hole-transport layer material, OLEDs, Polymer Solar Cells, Perovskite Solar Cells, OFETs.

Product Details

Purity	>99% (sublimed)
Melting point	291 °C (DSC onset)
Appearance	Brown-yellow powder

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the Sublimed Materials for OLED devices page.

Device structure	ITO/m-mTDATA*:F4-TCNQ (100 nm)/TPD (5 nm)/Alq3 (20 nm) /BPhen (10 nm)/ Bphen:Li (30 nm)/LiF (1 nm)/Al (100 nm) [1]
Colour	Green
Luminance	1,000 cd/m2 at 2.9 V (high brightness at low operating voltage)
Max. Current Efficiency	5.27 cd/A

Device structure	ITO/MeO–TPD*:F4-TCNQ (100 nm)/Spiro-TAD (10 nm)/TCTA:Ir(ppy)3 (5 nm)/Bphen (10 nm)/Cs-doped Bphen (50 nm)/Al [5]
Colour	Green
Max. EQE	13.7%
Max. Power Efficiency	52 lm W−1

Device structure	ITO/0.4 wt% F4TCNQ doped α NPD (30 nm)/ 5 wt% Ir (ppy)3 doped CBP (50 nm)/BPhen (30 nm)/20 wt% TCNQ mixed BPhen (1.5 nm)/Al [6]
Colour	Green
Luminance@15 V	1,320 cd/m2
Power Efficiency@14 V	56.6 lm W−1
Current Efficiency@14 V	23.17 cd/A

Device structure	ITO/F4TCNQ (3 nm)/MeO-Spiro-TPD (27 nm)/CBP + BCzVbi* (50 nm)/BPhen (10 nm)/TCNQ mixed BPhen (1.5 nm)/Al [7]
Colour	Red
Luminance@ 10 mA/cm2	1,790 cd/m2
Power Efficiency@ 10 mA/cm2	4.65 lm W−1
Current Efficiency@ 10 mA/cm2	18.0 cd/A

Device structure	ITO/MeO-TPD: F4-TCNQ (100 nm, 4%)/NPB (15 nm)/CBP: (MPPZ)2Ir(acac) (25 nm, 8.5%)/CBP (4 nm)/CBP: DSA-ph (20 nm, 3%)/ETLs (30 nm)/LiF (1 nm)/Al (200 nm) [8]
Colour	White
Max. Luminance	97,067 cd/m2
Max. Current Efficiency	42.8 cd/A
Max. Power Efficiency	21.1 lm W−1

Device structure	ITO (120 nm)/0.4 wt. % F4-TCNQ:α-NPD (35 nm)/5 wt. % BCzVBi:CBP (20 nm)/ 5 wt. % Ir(ppy)3:CBP (4 nm)/0.75 wt. % Ir(btp)2acac:CBP (12.5 nm)/BAlq (30 nm)/LiF (1 nm)/Al (150 nm) [9]
Colour	White
Max. Luminance	106,100 cd/m2
Max. Current Efficiency	50.3 cd/A
Max. Power Efficiency	26.3 lm W−1

Device structure	ITO/PTAA/ CH3NH3PbI3/PCBM/C60/BCP/Ag [10]	ITO/PTAA:F4TCNQ (1 wt%)/CH3NH3PbI3/PCBM/C60/BCP/Ag [10]
Jsc (mA cm-2)	21.6	21.6
Voc (V)	1.05	1.09
FF (%)	65.7	74
PCE (best)	14.8	17.5

*For chemical structure information, please refer to the cited references.

Characterisation

Pricing

Grade	Order Code	Quantity	Price
Sublimed (>99% purity)	M351	100 mg	£80.00
Sublimed (>99% purity)	M351	250 mg	£172.00
Sublimed (>99% purity)	M351	500 mg	£276.00
Sublimed (>99% purity)	M351	1 g	£432.00
Sublimed (>99% purity)	M351	5 g	£1840.00
Sublimed (>99% purity)	M351	10 g	£3200.00

Literature and Reviews

1. Low-voltage organic electroluminescent devices using pin structures, J. Huang et al., Appl. Phys. Lett. 80, 139 (2002); https://dx.doi.org/10.1063/1.1432110.
2. Molecular Doping Enhances Photoconductivity in Polymer Bulk Heterojunction Solar Cells, Y. Zhang et al., Adv. Mater., 25, 7038–7044 (2013).
3. Band Gap Opening of Bilayer Graphene by F4-TCNQ Molecular Doping and Externally Applied Electric Field, X. Tian et al., J. Phys. Chem. B, 114 (35), 11377–11381 (2010).
4. p-type doping of graphene with F4-TCNQ, H. Pinto et al., J. Phys.: Condens. Matter 21, 402001 (2009), stacks.iop.org/JPhysCM/21/402001.
5. Very high-efficiency and low voltage phosphorescent organic light-emitting diodes based on a p-i-n junction, G. He et al., J. Appl. Phys. 95, 5773 (2004); https://dx.doi.org/10.1063/1.1702143.
6. Novel organic electron injection layer for efficient and stable organic light emitting diodes, R. Grover et al., J. Luminescence, 146, 53–56 (2014). https://dx.doi.org/10.1016/j.jlumin.2013.09.004.
7. Light outcoupling efficiency enhancement in organic light emitting diodes using an organic scattering layer, R. Grover et al., Phys. Status Solidi RRL 8 (1), 81–85 (2014). DOI: 10.1002/pssr.201308133.
8. Efficient single-emitting layer hybrid white organic light-emitting diodes with low efficiency roll-off, stable color and extremely high luminance, B. Liu et al., J. Ind.&Eng. Chem., 30, 85–91 (2015); https://dx.doi.org/10.1016/j.jiec.2015.05.006.
9. Conductive cooling in white organic light emitting diode for enhanced efficiency and life time,P. Tyagi et al., Appl. Phys. Lett. 106, 013301 (2015); https://dx.doi.org/10.1063/1.4903800.
10. Doped hole transport layer for efficiency enhancement in planar heterojunction organolead trihalide perovskite solar cells, Q. Wang et al., Nano Energy 15, 275–280 (2015); doi:10.1016/j.nanoen.2015.04.029.

 

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To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.

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