2,2",2""-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole), TPBi, being electron deficient, is normally used as electron transport layer material in optoelectronic devices. Having a low LUMO energy level (2.7 eV), TPBi is also used as host material for both fluorescent and phosphorescent light emitting systems.

In some cases, TPBI is used to replace CBP (HBL)/Alq₃ (ETL) to simplify the device structure for its excellent electron transporting and also its hole blocking abilities with very deep HOMO energy level (HOMO = 6.2/6.7 eV). It has also been reported that TPBi could be used as electron injection layer material between Alq₃ (ETL) and Cs₂O₃/Al (electrode). It suggested that TPBI thin layer at the Alq₃/Cs₂O₃ interface facilitates the electron injection and is also involved with hole-blocking and exciton confinement [3].

General Information

CAS number	192198-85-9
Chemical formula	C45H30N6
Molecular weight	408.49 g/mol
Absorption	λmax 305 nm in THF
Fluorescence	λem 370 nm in THF
HOMO/LUMO	HOMO 6.2/6.7 eV, LUMO 2.7 eV [1, 2]
Synonyms	2,2",2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)
Classification / Family	Benzimidazole derivatives, Electron transport layer materials (ETL), Electron injection layer materials (EIL), Hole blocking layer materials (HBL), Fluorescent and phosphorescent host materials. Light-Emitting Diodes, Organic electronics

Product Details

Purity	Sublimed* >99.5% Unsublimed* >98.0%
Melting point	272 - 277 °C (lit.)
Colour	White Powder

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the Sublimed Materials for OLED devices page.

Chemical Structure

Device Structure(s)

Device structure	ITO/MoO3(1 nm)/mCP (60 nm)/mCP:TPBi:Ir(tfmppy)2(tpip)* (20 nm, 1:1, 6 wt%)/TPBi (15 nm)/TPPhen:W2(hpp)4* (45 nm, 12 wt%)/Al (100 nm) [2]
Colour	Green
Max. EQE	20.8%
Max. Current Efficiency	72.9 cd/A
Max. Power Efficiency	66.3 lm W−1

Device structure	ITO/PEDOT:PSS/PFO:MEH-PPV (1.0 wt%)/TPBi/LiF/Al [4]
Colour	White
Max. Luminance	7,560  cd/m2
Max. Current Efficiency	7.8 cd/A

Device structure	ITO/α-NPD (30 nm)/TCTA (20 nm)/CzSi* (10 nm)/10 wt% DMOC-DPS:DPEPO* (20 nm)/DPEPO (10 nm)/TPBI (30 nm)/LiF (0.5 nm)/Al [5]
Colour	Blue
Max. Luminance	2,544  cd/m2
Max. EQE	≥ 14.5%

Device structure	ITO/NPB/rubrene in p-DMDPVBi:NPB/TPBi/LiF/Al [6]
Colour	White
Max. Luminance	18,100  cd/m2
Max. Current Efficiency	10.6 cd/A

Device structure	ITO/PEDOT:PSS/P2*/TPBi/LiF/Al [7]
Colour	Deep Blue
Max. Luminance	274  cd/m2
Max. EQE	3.9%
Max. Current Efficiency	1.3 cd/A
Max. Power Efficiency	0.99 lm W−1

Device structure	ITO/NPB (30 nm)/CBP:Ir(ppy)3 (20 nm)/TPBi:Ir(ppy)3 (10 nm)/TPBi (10 nm)/TPBi:LiF (40 nm)/LiF (1.2 nm)/Al(150 nm) [10]
Colour	Green
Max. Luminance	66,820 cd/m2
Max. Current Efficiency	40.5 cd/A
Max. Power Efficiency	23.7 lm W−1

Device structure	Al/MoO3 (3 nm)/mCP (50 nm)/Ir(tfmppy)2(tpip)* (0.5 nm)/TPBi (2.5 nm)/mCP (2.5 nm)/Ir(tfmppy)2(tpip) (0.5 nm)/TPBi (10 nm)/Bphen (45 nm)/Liq (1 nm)/Al (1 nm)/Ag (22 nm)/mCP (80 nm) [11]
Colour	Green
Max. Current Efficiency	126.3 cd/A

Device structure	ITO/m-MTDATA (30 nm)/NPB (20 nm)/TPBI:4 wt% Ir(ppy)3:2 wt%Ir(piq)2(acac) (30 nm)/ Alq3 (20 nm)/LiF/Al [12]
Colour	White
Max. Luminance	33,012 cd/m2
Current Efficiency@100  cd/m2	15.3 cd/A
Max. Powder Efficiency	10.7 lm W−1

*For chemical structure informations please refer to the cited references

Pricing

Grade	Order Code	Quantity	Price
Sublimed (>99.5% purity)	M651	250 mg	£158.00
Unsublimed (>98.0% purity)	M652	500 mg	£167.00
Sublimed (>99.5% purity)	M651	500 mg	£253.00
Unsublimed (>98.0% purity)	M652	1 g	£267.00
Sublimed (>99.5% purity)	M651	1 g	£404.00

MSDS Documentation

TPBi MSDS sheet

Literature and Reviews

1. Highly efficient single-layer dendrimer light-emitting diodes with balanced charge transport, T. D. Anthopoulos et al., Appl. Phys. Lett., 82, 4824 (2003); doi: 10.1063/1.1586999.
2. High efficiency green phosphorescent organic light-emitting diodes with a low roll-off at high brightness, J. Wang et al., Org. Electronics, 14, 2854–2858 (2013). http://dx.doi.org/10.1016/j.orgel.2013.08.006.
3. Improved Hole-Blocking and Electron Injection Using a TPBI Interlayer at the Cathode Interface of OLEDs, J. Lian et al., Chin. Phys. Lett., 28, 047803 (2011). http://iopscience.iop.org/0256-307X/28/4/047803.
4. Improving light efficiency of white polymer light emitting diodes by introducing the TPBi exciton protection layer, S. B. Shin et al., Thin Solid Films 517, 4143–4146 (2009). doi:10.1016/j.tsf.2009.02.027.
5. High-efficiency deep-blue organic light-emitting diodes based on a thermally activated delayed fluorescence emitter, S. Wu et al., J. Mater. Chem. C, 2, 421 (2014). DOI: 10.1039/c3tc31936a.
6. Co-Host Comprising Hole-Transporting and Blue-Emitting Components for Efficient Fluorescent White OLEDs, Y-C. Chen et al., J. Electrochem. Soc., 159 (4) J127-J131 (2012); doi: 10.1149/2.092204jes.
7. Fluorene co-polymers with high efficiency deep blue electroluminescence, J. Santos et al., J. Mater. Chem. C, 3, 2479 (2015); DOI: 10.1039/c4tc02766c.
8. High efficiency and low efficiency roll off in white phosphorescent organic lightemitting diodes by managing host structures, K. S. Yook et al., Appl. Phys. Lett., 92, 193308 (2008); doi: 10.1063/1.2929742.
9. High efficiency green phosphorescent organic light emitting device with (TCTA/TCTA0.5TPBi0.5/TPBi): Ir(ppy)3 emission layer, J. G. Jang et al., Thin Solid Films 517, 4122–4126 (2009). doi:10.1016/j.tsf.2009.02.015.
10. Double-emission-layer green phosphorescent OLED based on LiF-doped TPBi as electron transport layer for improving efficiency and operational lifetime, Q. Yang et al., Syn. Metals 162, 398– 401 (2012). doi:10.1016/j.synthmet.2011.12.027.
11. High efficiency green phosphorescent top-emitting organic light-emitting diode with ultrathin non-doped emissive layer, X. Shi et al., Org. Electronics, 15, 2408–2413 (2014). http://dx.doi.org/10.1016/j.orgel.2014.07.001.
12. High-efficiency electrophosphorescent white organic light-emitting devices with a double-doped emissive layer, W. Xie et al., Semicond. Sci. Technol. 20, 326–329 (2005); doi:10.1088/0268-1242/20/3/013.

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To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.

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